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F3-10666CL9D-8GBSQ & Thinkpad W510
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Hello everyone,
I am just posting here to confirm that the G.Skill RAM model # F3-10666CL9D-8GBSQ works just fine now with the Lenovo W510 Laptop. I have loaded my W510 with 16GB?s of the above stated RAM (4 sticks of 4GBs).
I have stressed it a lot and still didn?t get any BSoD?s at all. As a matter of fact, I ran a RAMDisk on it and played games from the RAMDisk and it runs flawlessly. It gets about 3800 MBPS read and 4200 MBPS write (CrystalDiskMark Bench). It?s been perfect for video encoding and photo-shop scratch disk, very rapid and very responsive with minimal heat dissipation.
The latest BIOS from Lenovo (Version 1.37) supports 2T Command Rate (CR) and this RAM has been functioning very well so far. I?ve gotten 7.4 Windows Experience Index (Win 7 pro x64) once I installed this RAM (previously 5.9 with the Lenovo installed high density RAM).
Here are some system specs to check if your system matches mine:
Code:Lenovo W510 4318CTO ------------------------------------------------------------------------- Processors Information ------------------------------------------------------------------------- Processor 1 ID = 0 Number of cores 4 (max 8) Number of threads 8 (max 16) Name Intel Core i7 920XM Codename Clarksfield Specification Intel(R) Core(TM) i7 CPU X 920 @ 2.00GHz Package (platform ID) Socket 989 rPGA (0x4) CPUID 6.E.5 Extended CPUID 6.1E Core Stepping B1 Technology 45 nm TDP Limit 55 Watts Core Speed 2507.1 MHz Multiplier x FSB 19.0 x 132.0 MHz Rated Bus speed 2375.2 MHz Stock frequency 2000 MHz Instructions sets MMX, SSE, SSE2, SSE3, SSSE3, SSE4.1, SSE4.2, EM64T, VT-x L1 Data cache 4 x 32 KBytes, 8-way set associative, 64-byte line size L1 Instruction cache 4 x 32 KBytes, 4-way set associative, 64-byte line size L2 cache 4 x 256 KBytes, 8-way set associative, 64-byte line size L3 cache 8 MBytes, 16-way set associative, 64-byte line size FID/VID Control yes Turbo Mode supported, enabled Max turbo frequency 3200 MHz Max non-turbo ratio 15x Max turbo ratio 24x Max efficiency ratio 9x TDC Limit 47 Amps Core TDP 47 Watts Uncore TDP 8 Watts Power @ 9x 18 Watts Power @ 10x 21 Watts Power @ 11x 26 Watts Power @ 12x 32 Watts Power @ 13x 38 Watts Power @ 14x 46 Watts Power @ 15x 55 Watts Max bus number 255 Attached device PCI device at bus 255, device 2, function 1 Attached device PCI device at bus 255, device 3, function 4 Attached device PCI device at bus 255, device 2, function 1 Chipset ------------------------------------------------------------------------- Northbridge Intel DMI Host Bridge rev. 11 Southbridge Intel QM57 rev. 06 Graphic Interface PCI-Express PCI-E Link Width x16 PCI-E Max Link Width x16 Memory Type DDR3 Memory Size 16384 MBytes Channels Dual Memory Frequency 659.8 MHz (2:10) CAS# latency (CL) 9.0 RAS# to CAS# delay (tRCD) 9 RAS# Precharge (tRP) 9 Cycle Time (tRAS) 24 Row Refresh Cycle Time (tRFC) 107 Command Rate (CR) 2T Uncore Frequency 2375.2 MHz -------------------------------------------------------------------------
Regards,
Al.
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Many laptop makers more or less lock down the BIOS to ensure you come back to them for addons/upgrades....the use of proprietary parts also used to be a problem w/ some desktops, Compaq and Dell in particular where you almost HAD to go to them for DRAM and at times even other things like HDs
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Thanks for the pointer to high density modules.
Indeed the official Lenovo 4G modules are high density ones (4 chips) OEM-ed by Samsung. Also Kingston (KTL-TP3B/4G), CORSAIR and Mushkin also have such high-den 4G modules. However judging from the Newegg reviews, those sold on the retail market have a high rate of DoA.
It is a pity that GSkill seems not interested/involved in this niche market. I can't seem to find a similar module by GSkill.
P.S. I did a test of the GSkill modules on a different laptop with CR=2T and a higher TRFC and they worked fine. Clearly the modules are not defective, but just incompatible with W510.
Originally posted by GSKILL TECH View PostIt appears they do this so they can sell their high density memory at a higher price. Consequently, the more standard low density memory will not work properly. More companies will do this so they can sell their $500 memory.
So the key is, 4GB modules that have 4 large chips on each side should be compatible. Samsung makes this I know.
Thank you
GSKILL TECH
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It appears they do this so they can sell their high density memory at a higher price. Consequently, the more standard low density memory will not work properly. More companies will do this so they can sell their $500 memory.
So the key is, 4GB modules that have 4 large chips on each side should be compatible. Samsung makes this I know.
Thank you
GSKILL TECH
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Most DRAM tends to work best at CR 2, but your right laptop makers in particular tune the BIOS to keep third party vendors from selling add ons and upgrades - some desktop makers still do also i.e. Dell...Could drop them a line and complain about it...if nothing else a little peace of mind from griping, I do it all the time
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No. Neither timing nor voltage. The only mem-related option my bios has is whether to run an extended mem test at the power up.
I have a conspiracy theory: lenovo locks the command rate to 1T so that most CR=2 after-market ram will become incompatible and we would have to buy their own "certified" modules which costs ~$400
"Lenovo 4GB PC3-8500 1066Mhz DDR3 SODIMM Memory
51J0493
Web Price $449.95 *"
Lenovo SODIMM? Lenovo SODOMY is more like itLast edited by simulink; 12-07-2010, 12:27 PM.
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Can you adjust timings or voltages? Don't have a manual immediately handy, can pull off later this PM or if GSkill shows they may have one or already know
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Unable to. Bios does have such an option. 1T command rate seems hard-wired into the laptop. What alternatives do I have?
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F3-10666CL9D-8GBSQ & Thinkpad W510
My 4Gx2 set (F3-10666CL9D-8GBSQ) seems have some compatibility issues with Thinkpad W510.
Symptoms:
Random app crashes and BSoD.
System config:
Thinkpad W510 4389-CTO,
I7 720qm,
Motherboard Chipset: Intel QM57 (IbexPeak-M DO)
Quadro Fx880m,
The latest bios (1.34),
Windows 7 Pro with all the updates and the latest drivers,
4Gx2 installed in the first and third slot to form dual channel.
Mem info:
General information
Total Memory Size: 8 GBytes
Current Performance Settings
Maximum Supported Memory Clock: 666.7 MHz (5 : 1 ratio)
Current Memory Clock: 1818.2 MHz (5 : 1 ratio)
Current Timing (tCAS-tRCD-tRP-tRAS): 9.0-9-9-24
Memory Runs At: Dual-Channel
Command Rate: 1T
Read to Read Delay (tRD_RD) Same Rank: 4T
Read to Read Delay (tRD_RD) Different Rank: 6T
Read to Read Delay (tRD_RD) Different DIMM: 7T
Write to Write Delay (tWR_WR) Same Rank: 4T
Write to Write Delay (tWR_WR) Different Rank: 7T
Write to Write Delay (tWR_WR) Different DIMM: 7T
Read to Write Delay (tRD_WR) Same Rank: 10T
Read to Write Delay (tRD_WR) Different Rank: 10T
Read to Write Delay (tRD_WR) Different DIMM: 10T
Write to Read Delay (tWR_RD) Same Rank (tWTR): 16T
Write to Read Delay (tWR_RD) Different Rank: 5T
Write to Read Delay (tWR_RD) Different DIMM: 5T
Read to Precharge Delay (tRTP): 5T
Write to Precharge Delay (tWTP/tWR): 21T
RAS# to RAS# Delay (tRRD): 4T
Refresh Cycle Time (tRFC): 107T
Four Activate Window (tFAW): 20T
Module 0 info
General Module Information
Module Number: 0
Module Size: 4096 MBytes
Memory Type: DDR3 SDRAM
Module Type: SO-DIMM
Memory Speed: 666.7 MHz (PC3-10600)
Module Manufacturer: G Skill
Module Part Number: F3-10666CL9-4GBSQ
Module Revision: 0
Module Serial Number: 0
Module Manufacturing Date: Year: 2000, Week: 0
Module Manufacturing Location: 0
SDRAM Manufacturer: Unknown
Error Check/Correction: None
Module characteristics
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
Module timing
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 400.0 MHz: 6-6-6-15
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
Features
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Not Supported
Extended Temperature Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Module 1 info are largely the same.
Other info:
I ran 20 passes of extended Windows Memory diagnostic and found no problem. So it means the modules are not likely to be defective under normal operation conditions. Right?
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