| Module Manufacturer: | G.Skill |
| Module Part Number: | F4-4400C17-16GTZR |
| Module Series: | Trident Z RGB |
| DRAM Manufacturer: | Samsung |
| DRAM Components: | K4A8G085WB-BCPB |
| DRAM Die Revision / Process Node: | B / 20 nm |
| Module Manufacturing Date: | Undefined |
| Module Manufacturing Location: | Taipei, Taiwan |
| Module Serial Number: | 00000000h |
| Module PCB Revision: | 00h |
| Fundamental Memory Class: | DDR4 SDRAM |
| Module Speed Grade: | DDR4-2133 |
| Base Module Type: | UDIMM (133,35 mm) |
| Module Capacity: | 16 GB |
| Reference Raw Card: | B1 (8 layers) |
| JEDEC Raw Card Designer: | Micron Technology |
| Module Nominal Height: | 31 < H <= 32 mm |
| Module Thickness Maximum, Front: | 1 < T <= 2 mm |
| Module Thickness Maximum, Back: | 1 < T <= 2 mm |
| Number of DIMM Ranks: | 2 |
| Address Mapping from Edge Connector to DRAM: | Mirrored |
| DRAM Device Package: | Standard Monolithic |
| DRAM Device Package Type: | 78-ball FBGA |
| DRAM Device Die Count: | Single die |
| Signal Loading: | Not specified |
| Number of Column Addresses: | 10 bits |
| Number of Row Addresses: | 16 bits |
| Number of Bank Addresses: | 2 bits (4 banks) |
| Bank Group Addressing: | 2 bits (4 groups) |
| DRAM Device Width: | 8 bits |
| Programmed DRAM Density: | 8 Gb |
| Calculated DRAM Density: | 8 Gb |
| Number of DRAM components: | 16 |
| DRAM Page Size: | 1 KB |
| Primary Memory Bus Width: | 64 bits |
| Memory Bus Width Extension: | 0 bits |
| DRAM Post Package Repair: | Supported |
| Soft Post Package Repair: | Not supported |
| Fine Timebase: | 0,001 ns |
| Medium Timebase: | 0,125 ns |
| CAS Latencies Supported: | 10T, 11T, 12T, 13T, 14T, 15T, 16T |
| Minimum Clock Cycle Time (tCK min): | 0,938 ns (1066,10 MHz) |
| Maximum Clock Cycle Time (tCK max): | 1,500 ns (666,67 MHz) |
| CAS# Latency Time (tAA min): | 13,750 ns |
| RAS# to CAS# Delay Time (tRCD min): | 13,750 ns |
| Row Precharge Delay Time (tRP min): | 13,750 ns |
| Active to Precharge Delay Time (tRAS min): | 33,000 ns |
| Act to Act/Refresh Delay Time (tRC min): | 46,750 ns |
| Normal Refresh Recovery Delay Time (tRFC1 min): | 350,000 ns |
| 2x mode Refresh Recovery Delay Time (tRFC2 min): | 260,000 ns |
| 4x mode Refresh Recovery Delay Time (tRFC4 min): | 160,000 ns |
| Short Row Active to Row Active Delay (tRRD_S min): | 3,700 ns |
| Long Row Active to Row Active Delay (tRRD_L min): | 5,300 ns |
| Long CAS to CAS Delay Time (tCCD_L min): | 5,625 ns |
| Four Active Windows Delay (tFAW min): | 21,000 ns |
| Maximum Active Window (tMAW): | 8192*tREFI |
| Maximum Activate Count (MAC): | Unlimited MAC |
| DRAM VDD 1,20 V operable/endurant: | Yes/Yes |
| Supply Voltage (VDD), Min / Typical / Max: | 1,16V / 1,20V / 1,26V |
| Activation Supply Voltage (VPP), Min / Typical / Max: | 2,41V / 2,50V / 2,75V |
| Termination Voltage (VTT), Min / Typical / Max: | 0,565V / 0,605V / 0,640V |
| Module Thermal Sensor: | Not Incorporated |
| Manufacturer: | OnSemi |
| Model: | N34TS04 |
| Revision: | 30h |
| Temperature Monitor Status: | Active |
| Current Ambient Temperature: | 29,000 °C |
| Sensor Resolution: | 0,0625 °C (12-bit ADC) |
| Accuracy over the active range (75 °C to 95 °C): | ±1 °C |
| Accuracy over the monitoring range (40 °C to 125 °C): | ±2 °C |
| Open-drain Event Output: | Disabled |
| 10V of VHV on A0 pin: | Supported |
| Negative Temperature Measurements: | Supported |
| Interrupt capabilities: | Supported |
| SMBus timeout period for TS access: | 25 to 35 ms |
| SPD Revision: | 1.0 |
| SPD Bytes Total: | 512 |
| SPD Bytes Used: | 384 |
| SPD Checksum (Bytes 00h-7Dh): | 7EAFh (OK) |
| SPD Checksum (Bytes 80h-FDh): | DF74h (OK) |
| JEDEC DIMM Label: | 16GB 2Rx8 PC4-2133-UB1-10 |
| 1067 MHz | 16 | 15 | 15 | 36 | 50 | 4 | 6 | 6 | 23 |
| 1067 MHz | 15 | 15 | 15 | 36 | 50 | 4 | 6 | 6 | 23 |
| 933 MHz | 14 | 13 | 13 | 31 | 44 | 4 | 5 | 6 | 20 |
| 933 MHz | 13 | 13 | 13 | 31 | 44 | 4 | 5 | 6 | 20 |
| 800 MHz | 12 | 11 | 11 | 27 | 38 | 3 | 5 | 5 | 17 |
| 800 MHz | 11 | 11 | 11 | 27 | 38 | 3 | 5 | 5 | 17 |
| 667 MHz | 10 | 10 | 10 | 22 | 32 | 3 | 4 | 4 | 14 |
| Profiles Revision: 2.0 | ||
| Profile 1 (Certified) Enables: Yes | ||
| Profile 2 (Extreme) Enables: No | ||
| Profile 1 Channel Config: 2 DIMM/channel | ||
| Speed Grade: | DDR4-4008 | N/A |
| DRAM Clock Frequency: | 2004 MHz | N/A |
| Module VDD Voltage Level: | 1,50 V | N/A |
| Minimum DRAM Cycle Time (tCK): | 0,499 ns | N/A |
| CAS Latencies Supported: | 17T | N/A |
| CAS Latency Time (tAA): | 16T | N/A |
| RAS# to CAS# Delay Time (tRCD): | 17T | N/A |
| Row Precharge Delay Time (tRP): | 17T | N/A |
| Active to Precharge Delay Time (tRAS): | 35T | N/A |
| Active to Active/Refresh Delay Time (tRC): | 64T | N/A |
| Four Activate Window Delay Time (tFAW): | 1026T | N/A |
| Short Activate to Activate Delay Time (tRRD_S): | 64T | N/A |
| Long Activate to Activate Delay Time (tRRD_L): | 64T | N/A |
| Normal Refresh Recovery Delay Time (tRFC1): | 16417T | N/A |
| 2x mode Refresh Recovery Delay Time (tRFC2): | 16417T | N/A |
| 4x mode Refresh Recovery Delay Time (tRFC4): | 16417T | N/A |
| Show delays in nanoseconds | ||
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